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with ultrafast soft recovery diode IRGB4059DPBF 1 www.irf.com 4/14/06 =

= c e c g

gce gate collector emitter e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5s scsoa ? square rbsoa ? 100% of the parts tested for 4x rated current (i lm ) ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current i lm clamped inductive load current a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt 2.70 r jc junction-to-case - diode 6.30 r cs case-tosink, flat, greased surface 0.5 r ja junction-to-ambient, typical socket mount 80 wt weight 1.44 g c/w v ge 600 8 4 16 16 8 4 16 -55 to + 175 300 (0.063 in. (1.6mm) from case) 20 30 56 28
IRGB4059DPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 15v, l = 100 h, r g = 100 ?. pulse width limited by max. junction temperature.

electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v ( br ) ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v,i c =100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.3?v/c v ge = 0v, i c = 250 a ( 25 -175 o c ) ? 1.75 2.05 i c = 4a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.15 ? v i c = 4a, v ge = 15v, t j = 150c 5,6,7,9, ?2.20? i c = 4a, v ge = 15v, t j = 175c 10 ,11 v ge(th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 100 a ? v ge(th) / ? tj threshold voltage temp. coefficient ? -18 ?mv/c v ce = v ge , i c = 250 a ( 25 -175 o c ) gfe forward transconductance ? 2.0 ? s v ce = 50v, i c = 4a, pw =80 s i ces ? 1 25 a v ge = 0v,v ce = 600v ? 280 ?a v ge = 0v, v ce = 600v, t j =175c 8 v fm ? 1.60 2.30 v i f = 4a ?1.30? i f = 4a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 9 13 i c = 4a 24 q g e gate-to-emitter charge (turn-on) ? 2 3 nc v cc = 400v ct1 q g c gate-to-collector charge (turn-on) ? 4 6 v ge = 15v e on turn-on switching loss ? 35 77 i c = 4a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 75 118 j r g = 100 ? , l=1mh, l s = 150nh, t j = 25c ct4 e total total switching loss ? 110 196 energy losses include tail and diode reverse recovery t d ( on ) turn-on delay time ? 25 33 i c = 4a, v cc = 400v t r rise time ? 10 14 ns r g = 100 ? , l=1mh, l s = 150nh ct4 t d ( off ) turn-off delay time ? 65 75 t j = 25c t f fall time ? 15 20 e on turn-on switching loss ? 90 ? i c = 4a, v cc = 400v, v ge = 15v 13,15 e off turn-off switching loss ? 120 ? j r g = 100 ? , l=1mh, l s = 150nh, t j = 175c ct4 e total total switching loss ? 210 ? energy losses include tail and diode reverse recovery wf1,wf2 t d ( on ) turn-on delay time ? 20 ? i c = 4a, v cc = 400v 14,16 t r rise time ? 15 ?nsr g = 100 ? , l=1mh, l s = 150nh ct4 t d ( off ) turn-off delay time ? 85 ?t j = 175c wf1,wf2 t f fall time ? 35 ? c ies input capacitance ? 240 ? v ge = 0v 22 c oes output capacitance ? 25 ? v cc = 30v c res reverse transfer capacitance ? 10 ? f = 1mhz t j = 175c, i c = 16a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 100 ? , v ge = +15v to 0v v cc = 400v, vp =600v 22, ct3 r g = 100 ? , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode 145 j t j = 175 o c 17,18,19 trr diode reverse recovery time 55 ns v cc = 400v, i f = 4a 20,21 irr peak reverse recovery current 11 a v ge = 15v, rg = 100 ? , l=1mh, l s =150nh wf3 diode forward voltage drop collector-to-emitter leakage current scsoa short circuir safe operating area 5 s pf ct6 9,10,11,12 conditions
IRGB4059DPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c; v ce = 15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s 0 20 40 60 80 100 120 140 160 180 t c (c) 0 1 2 3 4 5 6 7 8 9 i c ( a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c a ) fig. 3 - forward soa, t c = 25c; t j 175c 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 02468 v ce (v) 0 4 8 12 16 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 02468 v ce (v) 0 4 8 12 16 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
IRGB4059DPBF 4 www.irf.com fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 175c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 16 18 i c e ( a ) t j = 25c t j = 175c 02468 v ce (v) 0 4 8 12 16 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 175c
IRGB4059DPBF www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 100 ? ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 4a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 4a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 4.0a 0510 i c (a) 0 50 100 150 200 250 e n e r g y ( j ) e off e on 0 5 10 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ? ) 0 20 40 60 80 100 120 140 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ?) 0 2 4 6 8 10 12 14 16 18 i r r ( a ) 0 5 10 i f (a) 0 2 4 6 8 10 12 14 16 18 i r r ( a ) r g = 100 ? r g = 10 ? r g = 22 ? r g = 47 ?
IRGB4059DPBF 6 www.irf.com fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 4a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 4a, l=600h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 500 1000 di f /dt (a/s) 0 5 10 15 20 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 100 200 300 400 500 600 700 800 q r r ( n c ) 10 ? 22 ? 47 ? 100 ? 8.0a 4.0a 2.0a current (a) 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0246810 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 8 10 12 14 16 18 v ge (v) 0 5 10 15 20 25 0 5 10 15 20 25 t i m e ( s ) 0 5 10 i f (a) 0 50 100 150 200 250 e n e r g y ( j ) 10 ? 22 ? 47 ? 100 ?
IRGB4059DPBF www.irf.com 7 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) ri (c/w) ? (sec) 1.628158 0.000205 3.159113 0.00129 1.512729 0.010446 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri ri (c/w) ? (sec) 0.932018 0.000205 1.112118 0.00129 0.657365 0.010446 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri
IRGB4059DPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
IRGB4059DPBF www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. reverse recovery @ t j = 150c using ct.4 -100 0 100 200 300 400 500 11.90 12.10 12.30 time ( s) v ce (v) -5 0 5 10 15 20 25 e on loss test curre 90% test t 10% test current 5% v ce tr -100 0 100 200 300 400 500 -0.40 0.60 1.60 time( s) v ce (v) -2 0 2 4 6 8 10 e off loss 5% v ce 5% i ce 90% i ce tf wf.3- typ. reverse recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 -15 -10 -5 0 5 10 -0.05 0.05 0.15 0.25 time (s) i rr (a) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 -4.00 1.00 6.00 time (s) v ce (v) -10 0 10 20 30 40 50 i ce (a) v ce i c e
IRGB4059DPBF 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/06 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220ab packages are not recommended for surface mount application.

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lot code 1789 example: t his is an irf1010 note: "p" in assembly line position i ndi cates "l ead - f r ee" in the assembly line "c" as s embled on ww 19, 2000 international part number rectifier lot code assembly logo year 0 = 2000 dat e code week 19 line c
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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